International journal of Nano Scientific Networks and Nanotechnology (IJNN) is a multidisciplinary, peer reviewed journal which includes all the major fields in nanotechnology and Nano science. Nanoscience and nanotechnology brought up an unprecedented excitement in the scientific and engineering communities, especially the last decade. It is the engineering of functional systems at the molecular scale. This covers both current work and concepts that are more advanced.  International journal of Nano Scientific Networks and Nanotechnology   publishes original research papers during a broad area of nanoscience & engineering. IJNN provides an ideal forum for presenting original reports of theoretical and experimental nanoscience and nanotechnology research. Nanotechnology is a gathering of rising innovations in which the structure of matter is controlled at the nanometer scale, the size of little quantities of molecules, to create novel materials and gadgets that have valuable and one of kind properties. IJNN is naturally multidisciplinary, and welcomes submissions across biological, physical, engineering, and computer sciences. Contributions from both academia and industry are equally encouraged. IJNN also publishes innovative techniques and instrumentation for the fabrication, characterization and testing of nano-enabled devices and technologies, as well as advanced modelling and simulation methods.




Fu-Chien Chiu


Fu-Chien Chiu was born in Tainan, Taiwan. He received the B.S. degree in physics from Fu-Jen Catholic University, New Taipei City, Taiwan, in 1991 and the M.S. degree in electrical engineering and the Ph.D. degree in electronics engineering from National Tsing-Hua University, Hsinchu, Taiwan, in 1996 and 2005, respectively. His M.S. degree research was focus on the application of Ta2O5 thin films as the capacitor dielectric of DRAM. His Ph.D. degree research was focus on the study of the electrical characteristics of metal-oxide-semiconductor capacitors and MOSFETs using high-dielectric-constant thin films as the gate dielectrics.

He served his military duty in Taiwan as an Officer in the Army for two years. From 1996 to 1999, he was with Winbond Electronics Corporation, Hsinchu, where he worked on SRAM/DRAM process integration, process development and device reliability, and SRAM product engineering. In 2000, he was with Myson Technology, Inc., Hsinchu, where he worked on BJT analog circuit design. From 2001 to 2006, he rejoined Winbond Electronics Corporation, where he worked on ESD and latch-up protection design, device and product reliability engineering, and device wafer-level reliability assessments. In February 2006, he joined the faculty of the Department of Electronic Engineering, Ming Chuan University, Taoyuan City, Taiwan, as an Assistant Professor, where he has been a Professor since February 2013. His current research interests include thin film dielectric breakdown and reliability, fabrication and characterization of semiconductor devices, non-volatile memory devices, and high-k thin film applications. He is the holder of 15 patents and has published over 60 journal publications and conference proceedings.



Current Research

  • Dielectric thin film
  • Dielectric breakdown and device reliability
  • Resistive random access memory
  • Current conduction mechanism in dielectrics

Interested topics

  • Thinfilm dielectric breakdown and reliability,
  • Fabricationand characterization of semiconductor devices,
  • Non-volatilememory devices
  • High-k thin film applications
  • Lead Guest Editor, Advances in Materials Science and Engineering (Special issue on “Thin Film Applications in Advanced Electron Devices2014-2016”)
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